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Unlock NXP MCU PXAG17 Protected Flash and eprom memory needs to have a general knowledge about its structure, The PXAG17 Flash memory augments EPROM functionality with in-circuit electrical erasure and programming.

The Flash can be read and written as bytes. The Chip Erase operation will erase the entire program memory. The Block Erase function can erase any single Flash block.

Unlock NXP MCU PXAG17 Protected Flash

In-circuit programming and standard parallel programming are both available. On-chip erase and write timing generation contribute to a user friendly programming interface.

The PXAG17 Flash reliably stores memory contents even after 10,000 erase and program cycles. The cell is designed to optimize the erase and programming mechanisms as well as provide the convenience of Philip PXAG49K Microcontroller Flash Cracking. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling.

For In-System Programming, the PXAG17 can use a single +5 V power supply. Faster In-System Programming may be obtained, if required, through the use of a +12 V VPP supply. Parallel programming (using separate programming hardware) uses a +12 V VPP supply.

The XA-G49 contains 64k bytes of Flash program memory. This memory is organized as 5 separate blocks. The first two blocks are 8k bytes in size, filling the program memory space from address 0 through 3FFF hex which we are pay extra attention in the process of MCU reading.

The final three blocks are 16k bytes in size and occupy addresses from 4000 through FFFF hex. below Figure depicts the Flash memory configuration.

flash memory configuration