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Replicating Renesas MCU R5F101SJAFB#V0 Flash Memory File needs to attack renesas microprocessor tamper resistance system and extract mcu code from its flash memory;

1. VCC = 2.7 to 5.5 V at Topr = 0 to 60°C, unless otherwise specified.
2. 2.      Definition of programming/erasure endurance

The programming and erasure endurance is defined on a per-block basis.

If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times.

For example, if 1,024 1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance still stands at one.

However, the same address must not be programmed more than once per erase operation (overwriting prohibited).

3.      Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).

In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential addresses in turn so that as much of the block as possible is used up before performing an erase operation.

For example, when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the number of erase operations to a certain number.

If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase command at least three times until the erase error does not occur.

Customers desiring program/erase failure rate information should contact their Renesas technical support representative.

The data hold time includes time that the power supply is off or the clock is not supplied.