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ARM Microprocessor STM32F071V8 Flash Memory Unlocking will be able to extract flash content from mcu stm32f071vb memory and make mcu stm32f071v8 cloning units;

While a simple application is executed on the device, the device is stressed by injecting current into the I/O pins programmed in floating input mode. While current is injected into the I/O pin, one at a time, the device is checked for functional failures.

The failure is indicated by an out of range parameter: ADC error above a certain limit (higher than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of the -5 µA/+0 µA range) or other functional failure (for example reset occurrence or oscillator frequency deviation) when crack microcontroller stm32f070f6 flash memory.

The characterization results are given in Table 52. Negative induced leakage current is caused by negative injection and positive induced leakage current is caused by positive injection.

All I/Os are CMOS- and TTL-compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 21 for standard I/Os, and in Figure 22 for 5 V-tolerant I/Os. The following curves are design simulation results, not tested in production.