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Due to the ability of the on-board charge pump to erase and program the FLASH memory in the target application, provision is made for protecting a block of memory from unintentional erase or program operations due to system malfunction on Crack NXP MC908QT4 CPU Program Memory.

This protection is done by using of a FLASH Block Protect Register (FLBPR). The FLBPR determines the range of the FLASH memory which is to be protected. The range of the protected area starts from a location defined by FLBPR and ends at the bottom of the FLASH memory ($FFFF). When the memory is protected, the HVEN bit cannot be set in either ERASE or PROGRAM operations.

In performing a program or erase operation, the FLASH block protect register must be read after setting the PGM or ERASE bit and before asserting the HVEN bit.

Crack NXP MC908QT4 CPU Program Memory

When the FLBPR is program with all 0’s, the entire memory is protected from being programmed and erased. When all the bits are erased (all 1’s), the entire memory is accessible for program and erase.

When bits within the FLBPR are programmed, they lock a block of memory, address ranges as shown in 4.8.1 FLASH Block Protect Register. Once the FLBPR is programmed with a value other than $FF, any erase or program of the FLBPR or the protected block of FLASH memory is prohibited to facilitate the process of Motorola MC68HC908JK8 Embedded Flash Memory Restoration. The FLBPR itself can be erased or programmed only with an external voltage, VTST, present on the IRQ pin. This voltage also allows entry from reset into the monitor mode.